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  1/7 october 2003 ST2001FX high voltage fast-switching npn power transistor  new series, enhanced performance  fully insulated package (u.l. compliant) for easy mounting  high voltage capability  high switching speed  tigther hfe control  improved ruggedness applications:  horizontal deflection for color tvs over 21 inches and 15 inches monitors description the device is manufactured using diffused collector technology for more stable operation vs base drive circuit variations resulting in very low worst case dissipation. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 600 v v ebo emitter-base voltage (i c = 0) 7v i c collector current 10 a i cm collector peak current (t p < 5 ms) 20 a i b base current 7 a p tot total dissipation at t c = 25 c 63 w v ins insulation withstand voltage (rms) from all three leads to external heatsink 2500 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c isowatt218fx internal schematic diagram
ST2001FX 2/7 thermal data electrical characteristics (t j = 25 c unless otherwise specified) * pulsed: pulse duration = 300 s, duty cycle = 1.5 %. r thj-case thermal resistance junction-case max 2 c/w symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1500 v v ce = 1500 v t j = 125 c 1 2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 7 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 100 ma 600 v v ce(sat) * collector-emitter saturation voltage i c = 5 a i b = 1.25 a 1.5 v v be(sat) * base-emitter saturation voltage i c = 5 a i b = 1.25 a 1.2 v h fe * dc current gain i c = 6 a i c = 6 a v ce = 1 v v ce = 5 v 5 4.5 9 t s t f inductive load storage time fall time i c = 5 a i bon (end) = 850 ma l bb(off) = 2 h v bb(off) = -2.5 v f h = 64 khz (see figure 1) 2.6 0.2 3 0.4 s s
3/7 ST2001FX base-emitter saturation voltage collector-emitter saturation voltage output characteristics thermal impedance safe operating area derating curve
ST2001FX 4/7 dc current gain power losses dc current gain reverse biased safe operating area inductive load switchin times
5/7 ST2001FX figure 1: inductive load switching test circuit
ST2001FX 6/7 dim. mm. inch min. typ. max. min. typ. max. a 5.30 5.70 0.209 0.224 c 2.80 3.20 0.110 0.126 d 3.10 3.50 0.122 0.138 d1 1.80 2.20 0.071 0.087 e 0.80 1.10 0.031 0.043 f 0.65 0.95 0.026 0.037 f2 1.80 2.20 0.071 0.087 g 10.30 11.50 0.406 0.453 g1 5.45 0.215 h 15.30 15.70 0.602 0.618 l 9.80 10.20 0.386 0.402 l2 22.80 23.20 0.898 0.913 l3 26.30 26.70 1.035 1.051 l4 43.20 44.40 1.701 1.748 l5 4.30 4.70 0.169 0.185 l6 24.30 24.70 0.957 0.972 l7 14.60 15.00 0.575 0.591 n 1.80 2.20 0.071 0.087 r 3.80 4.20 0.150 0.165 dia 3.40 3.80 0.134 0.150 isowatt218fx mechanical data - weight : 5.6 g (typ.) - maximum torque (applied to mounting flange) recommended: 0.55 nm; maximum: 1 nm - the side of the dissipator must be flat within 80 mm
7/7 ST2001FX information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com


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